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| UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO Ic IB Pc Tj Tstg RATINGS 120 120 5 10 1 80 150 -55 ~150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25,unless otherwise specified)) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL V(BR)CEO ICBO IEBO HFE VCE(sat) VBE fT Cob TEST CONDITION Ic=50mA,IB=0 VCB=120V,IE=0 VEB=5V,Ic=0 VCE=5V,Ic=1A Ic=6A,IB=0.6A VCE=5V,Ic=5A VCE=5V,Ic=1A VCB=10V,IE=0, f=1MHz MIN 120 TYP MAX UNIT 10 10 160 2.0 1.5 V A A V V MHz pF 55 12 170 CLASSIFICATION OF hFE RANK RANGE R 55-110 O 80-160 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R214-003,A UTC 2SD718 12 COLLECTOR CURRENT, Ic (A) 10 8 6 4 2 0 400 300 NPN EPITAXIAL SILICON TRANSISTOR Ic - VCE DC CURRENT GAIN, hFE COMMON EMITTER Tc=25C 200 100 50 IB=20mA 0 1k 500 300 Tc=-25C Tc=25C Tc=100C ELECTRICAL CHARACTERISTICS CURVES hFE - Ic COMMON EMITTER VcE=5V 100 50 30 0 2 4 6 8 10 12 14 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE, VCE (V) COLLECTOR CURRENT, Ic (A) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat) (V) COMMON EMITTER 0.5 Ic/IB=10 0.3 100 T c= C 1 COLLECTOR POWER DISSIPATION, Pc (W) VCE(sat) - Ic Pc - Ta 100 80 60 2 3 1 1 Ta=Tc INFINITE HEAT SINK 2 300x300x2mm AI HEAT SINK 3 200x200x2mm AI HEAT SINK 4 100x100x2mm AI HEAT SINK 5 NO HEAT SINK 0.1 0.05 0.03 0.01 0.01 Tc=25C Tc=-25C 40 20 0 4 5 0 40 80 120 160 200 240 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT, Ic (A) AMBIENT TEMPERATURE, Ta ( ) 30 SAFE OPERATING AREA IC MAX(PULSED) * t=1mS * 10mS * 100mS * COLLECTOR CURRENT, Ic (A) 10 IC MAX(CONTINUOUS) S AT 0m R 50 PE 5 O =2 C Tc D * 3 N O IC 1 *SINGLE NONREPETITIVE PULSE Tc=25C CURVES MUST BE DERATED LINEARLY WIHT INCREASE IN TEMPERATURE. VCEO MAX. 0.3 0.1 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE, VCE (V) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R214-003,A UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R214-003,A |
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